IRFB5615PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.668mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Mounting Type :

Through Hole

Number of Pins :

3

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Width :

4.826mm

Recovery Time :

120 ns

Number of Elements :

1

Height :

9.02mm

Drain to Source Breakdown Voltage :

150V

Mount :

Through Hole

Power Dissipation-Max :

144W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

13.2 ns

Resistance :

39mOhm

ECCN Code :

EAR99

Element Configuration :

Single

Turn-Off Delay Time :

17.1 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 100µA

Rds On (Max) @ Id, Vgs :

39m Ω @ 21A, 10V

Nominal Vgs :

3 V

Threshold Voltage :

3V

Transistor Application :

AMPLIFIER

Rise Time :

23.1ns

Case Connection :

DRAIN

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

35A

Turn On Delay Time :

8.6 ns

Vgs (Max) :

±20V

Published :

2006

Power Dissipation :

144W