IRFB4615PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Package / Case :

TO-220-3

Series :

HEXFET®

Nominal Vgs :

3 V

Power Dissipation-Max :

144W Tc

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Mounting Type :

Through Hole

ECCN Code :

EAR99

Resistance :

39mOhm

Height :

16.51mm

Number of Pins :

3

Vgs (Max) :

±20V

FET Type :

N-Channel

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Published :

2008

Transistor Application :

SWITCHING

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Length :

10.668mm

Drain to Source Breakdown Voltage :

150V

Termination :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 100µA

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

39m Ω @ 21A, 10V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Width :

4.826mm

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

20 ns

Rise Time :

35ns

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

150V

Turn-Off Delay Time :

25 ns

Turn On Delay Time :

15 ns

Factory Lead Time :

12 Weeks

Power Dissipation :

144W

Continuous Drain Current (ID) :

35A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

3V