IRFB4615PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 100µA

Published :

2008

FET Type :

N-Channel

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Termination :

Through Hole

Turn On Delay Time :

15 ns

Width :

4.826mm

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Series :

HEXFET®

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

REACH SVHC :

No SVHC

Element Configuration :

Single

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

39m Ω @ 21A, 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Dual Supply Voltage :

150V

Rise Time :

35ns

Mount :

Through Hole

Threshold Voltage :

3V

Factory Lead Time :

12 Weeks

Nominal Vgs :

3 V

Number of Pins :

3

Height :

16.51mm

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

20 ns

Power Dissipation-Max :

144W Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

35A Tc

ECCN Code :

EAR99

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Turn-Off Delay Time :

25 ns

Resistance :

39mOhm

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

35A

Power Dissipation :

144W