IRFB4610

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2004

Series :

HEXFET®

Drain-source On Resistance-Max :

0.014Ohm

DS Breakdown Voltage-Min :

100V

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 100µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Package / Case :

TO-220-3

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

73A

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Rds On (Max) @ Id, Vgs :

14m Ω @ 44A, 10V

FET Type :

N-Channel

Case Connection :

DRAIN

Power Dissipation-Max :

190W Tc

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

370 mJ

Pulsed Drain Current-Max (IDM) :

290A