IRFB4510PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

250A

Mount :

Through Hole

Series :

HEXFET®

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Threshold Voltage :

2V

Case Connection :

DRAIN

Lead Free :

Lead Free

Turn On Delay Time :

13 ns

Drain to Source Voltage (Vdss) :

100V

Height :

9.02mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Rise Time :

32ns

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

140W

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

FET Type :

N-Channel

Number of Elements :

1

Turn-Off Delay Time :

28 ns

Input Capacitance (Ciss) (Max) @ Vds :

3180pF @ 50V

Nominal Vgs :

2 V

Width :

4.83mm

Radiation Hardening :

No

Element Configuration :

Single

Continuous Drain Current (ID) :

62A

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 37A, 10V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 100µA

Length :

10.67mm

Power Dissipation-Max :

140W Tc

Published :

2008

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB