IRFB4321PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Number of Elements :

1

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

83A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Fall Time (Typ) :

35 ns

Nominal Vgs :

5 V

Voltage - Rated DC :

150V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

Mount :

Through Hole

Height :

9.02mm

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Number of Terminations :

3

Rise Time :

60ns

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

Length :

10.6426mm

Recovery Time :

130 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Threshold Voltage :

5V

Mounting Type :

Through Hole

Lead Free :

Lead Free

ECCN Code :

EAR99

Power Dissipation-Max :

350W Tc

Transistor Element Material :

SILICON

Number of Pins :

3

Transistor Application :

SWITCHING

Published :

2008

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

4460pF @ 50V

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Breakdown Voltage :

150V

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

83A

Termination :

Through Hole

Width :

4.82mm

Dual Supply Voltage :

150V

Power Dissipation :

330mW

Turn-Off Delay Time :

25 ns

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

15m Ω @ 33A, 10V