IRFB4310ZGPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

6mOhm

Rds On (Max) @ Id, Vgs :

6mOhm @ 75A, 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Published :

2008

Max Operating Temperature :

175°C

Power Dissipation :

250W

Operating Temperature :

-55°C~175°C TJ

Rise Time :

60ns

Continuous Drain Current (ID) :

120A

Element Configuration :

Single

Packaging :

Tube

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

100V

Height :

16.51mm

Rds On Max :

6 mΩ

Turn On Delay Time :

20 ns

Power Dissipation-Max :

250W Tc

Nominal Vgs :

4 V

Drain to Source Voltage (Vdss) :

100V

Width :

4.826mm

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Length :

10.668mm

Vgs (Max) :

±20V

Series :

HEXFET®

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Number of Elements :

1

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

Supplier Device Package :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 150μA

Package / Case :

TO-220-3

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Input Capacitance :

6.86nF

Fall Time (Typ) :

57 ns

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

Mounting Type :

Through Hole

Turn-Off Delay Time :

55 ns