IRFB4212PBF
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- Mfr.Part #
- IRFB4212PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 18A TO220AB
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 25 mJ
- Turn On Delay Time :
- 7.7 ns
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- High Reliability
- Fall Time (Typ) :
- 3.9 ns
- Drain to Source Breakdown Voltage :
- 100V
- Height :
- 9.02mm
- Threshold Voltage :
- 5V
- Width :
- 4.82mm
- Recovery Time :
- 62 ns
- Voltage - Rated DC :
- 100V
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 57A
- Continuous Drain Current (ID) :
- 18A
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Mounting Type :
- Through Hole
- Length :
- 10.6426mm
- Published :
- 2005
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rise Time :
- 28ns
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Dual Supply Voltage :
- 100V
- Current Rating :
- 18A
- Packaging :
- Tube
- Turn-Off Delay Time :
- 14 ns
- Rds On (Max) @ Id, Vgs :
- 72.5m Ω @ 13A, 10V
- Resistance :
- 72.5mOhm
- Power Dissipation :
- 60W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Nominal Vgs :
- 5 V
- Power Dissipation-Max :
- 60W Tc
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Termination :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 50V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Datasheets
- IRFB4212PBF
N-Channel Tube 72.5m Ω @ 13A, 10V ±20V 550pF @ 50V 23nC @ 10V TO-220-3
IRFB4212PBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 25 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 550pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14 ns.Peak drain current for this device is 57A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
IRFB4212PBF Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 14 ns
based on its rated peak drain current 57A.
a threshold voltage of 5V
IRFB4212PBF Applications
There are a lot of Infineon Technologies
IRFB4212PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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