IRFB41N15D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

RoHS Status :

Non-RoHS Compliant

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

150V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

41A

Drain-source On Resistance-Max :

0.045Ohm

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Package / Case :

TO-220-3

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

470 mJ

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Packaging :

Tube

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

150V

Number of Terminations :

3

Vgs (Max) :

±30V

Power Dissipation-Max :

200W Tc

ECCN Code :

EAR99

Series :

HEXFET®

Terminal Position :

Single

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

164A

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING