IRFB4110PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation :

370W

Rise Time :

67ns

Transistor Application :

SWITCHING

Mount :

Through Hole

Number of Pins :

3

Published :

2008

FET Type :

N-Channel

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

100V

Width :

4.826mm

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Package / Case :

TO-220-3

Radiation Hardening :

No

Lead Free :

Lead Free

ECCN Code :

EAR99

Termination :

Through Hole

Recovery Time :

75 ns

Length :

10.66mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

670A

Turn On Delay Time :

25 ns

Height :

16.51mm

Power Dissipation-Max :

370W Tc

Fall Time (Typ) :

88 ns

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Drain-source On Resistance-Max :

0.0045ohm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Series :

HEXFET®

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

100V

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

9620pF @ 50V

Turn-Off Delay Time :

78 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Nominal Vgs :

4 V

Current Rating :

180A

Continuous Drain Current (ID) :

180A

Dual Supply Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Packaging :

Tube