IRFB3806PBF
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- Mfr.Part #
- IRFB3806PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 43A TO220AB
- Stock
- 3,899
- In Stock ：
- 3,899
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1150pF @ 50V
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Threshold Voltage :
- 4V
- Rise Time :
- 40ns
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 49 ns
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 6.3 ns
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 71W
- Resistance :
- 15.8mOhm
- Published :
- 2008
- Length :
- 10.6426mm
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Recovery Time :
- 33 ns
- Width :
- 4.82mm
- Rds On (Max) @ Id, Vgs :
- 15.8m Ω @ 25A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 9.017mm
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 43A
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 71W Tc
- Packaging :
- Tube
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Drain to Source Breakdown Voltage :
- 60V
- Fall Time (Typ) :
- 47 ns
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Datasheets
- IRFB3806PBF
N-Channel Tube 15.8m Ω @ 25A, 10V ±20V 1150pF @ 50V 30nC @ 10V TO-220-3
IRFB3806PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1150pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 43A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFB3806PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V
IRFB3806PBF Applications
There are a lot of Infineon Technologies
IRFB3806PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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