IRFB3607PBF

Manufacturer :

International Rectifier

Product Category :

Specialized ICs

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Resistance :

9mOhm

Package / Case :

TO-220-3

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

75V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Width :

4.82mm

Fall Time (Typ) :

96 ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Termination :

Through Hole

Continuous Drain Current (ID) :

80A

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Power Dissipation :

140W

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Dual Supply Voltage :

75V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Length :

10.6426mm

Vgs (Max) :

±20V

Turn On Delay Time :

16 ns

Number of Terminations :

3

Lead Free :

Lead Free

Turn-Off Delay Time :

43 ns

Series :

HEXFET®

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Power Dissipation-Max :

140W Tc

Nominal Vgs :

4 V

Rise Time :

110ns

Height :

9.017mm

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

4V @ 100µA

FET Type :

N-Channel

Published :

2008

Recovery Time :

50 ns