IRFB33N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Lead Free :

Contains Lead, Lead Free

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

Number of Elements :

1

REACH SVHC :

No SVHC

Number of Pins :

3

Turn On Delay Time :

13 ns

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Dual Supply Voltage :

150V

Height :

15.24mm

Mount :

Through Hole

Power Dissipation :

3.8W

Continuous Drain Current (ID) :

33A

Power Dissipation-Max :

3.8W Ta 170W Tc

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Width :

4.69mm

Current Rating :

33A

Resistance :

56Ohm

Rise Time :

38ns

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Voltage - Rated DC :

150V

Nominal Vgs :

5.5 V

Length :

10.5156mm

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

56m Ω @ 20A, 10V

Threshold Voltage :

5.5V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

21 ns

Number of Terminations :

3

Series :

HEXFET®

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Radiation Hardening :

No

Turn-Off Delay Time :

23 ns

Element Configuration :

Single