IRFB3307ZPBF

Manufacturer :

International Rectifier

Product Category :

Specialized ICs

Number of Elements :

1

Rise Time :

64ns

Series :

HEXFET®

Lead Free :

Lead Free

Packaging :

Tube

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 50V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 150μA

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Height :

9.02mm

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Resistance :

5.8mOhm

Voltage - Rated DC :

75V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

75V

Power Dissipation-Max :

230W Tc

Number of Terminations :

3

Termination :

Through Hole

Package / Case :

TO-220-3

Power Dissipation :

230mW

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Recovery Time :

33 ns

Transistor Element Material :

SILICON

Length :

10.66mm

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 75A, 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

480A

Fall Time (Typ) :

65 ns

Width :

4.82mm

Turn On Delay Time :

15 ns

Continuous Drain Current (ID) :

120A

Current Rating :

120A

Published :

2004

Contact Plating :

Tin

Turn-Off Delay Time :

38 ns

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Nominal Vgs :

4 V

Drain to Source Breakdown Voltage :

75V