IRFB3307PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Vgs (Max) :

±20V

Power Dissipation-Max :

200W Tc

Number of Pins :

3

Current Rating :

130A

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Mount :

Through Hole

Package / Case :

TO-220-3

Dual Supply Voltage :

75V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

75A

Number of Terminations :

3

Length :

10.6426mm

Continuous Drain Current (ID) :

130A

Lead Free :

Lead Free

Turn-Off Delay Time :

51 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 150μA

Transistor Application :

SWITCHING

Voltage - Rated DC :

75V

Avalanche Energy Rating (Eas) :

270 mJ

Fall Time (Typ) :

63 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Threshold Voltage :

4V

Lead Pitch :

2.54mm

Nominal Vgs :

4 V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Drain to Source Breakdown Voltage :

75V

Power Dissipation :

200W

Height :

4.82mm

Transistor Element Material :

SILICON

Rise Time :

120ns

RoHS Status :

ROHS3 Compliant

Resistance :

6.3mOhm

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 75A, 10V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

26 ns

Element Configuration :

Single

Radiation Hardening :

No

Width :

4.826mm

Published :

2004