IRFB3307

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Qualification Status :

Not Qualified

Terminal Position :

Single

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 150μA

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Pulsed Drain Current-Max (IDM) :

510A

Drain-source On Resistance-Max :

0.0063Ohm

Drain to Source Voltage (Vdss) :

75V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Series :

HEXFET®

DS Breakdown Voltage-Min :

75V

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 75A, 10V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Number of Terminations :

3

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

270 mJ

Drain Current-Max (Abs) (ID) :

75A

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

250W Tc

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Transistor Application :

SWITCHING

Surface Mount :

No

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ