IRFB3306PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

Max Junction Temperature (Tj) :

175°C

REACH SVHC :

No SVHC

Power Dissipation :

230W

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

160A

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Width :

4.826mm

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Threshold Voltage :

4V

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Length :

10.668mm

Vgs(th) (Max) @ Id :

4V @ 150μA

Turn-Off Delay Time :

40 ns

Number of Terminations :

3

Drain to Source Breakdown Voltage :

60V

Published :

2011

Packaging :

Tube

FET Type :

N-Channel

Number of Pins :

3

Resistance :

4.2mOhm

Radiation Hardening :

No

Lead Free :

Lead Free

Case Connection :

DRAIN

Number of Elements :

1

Voltage - Rated DC :

60V

Recovery Time :

31 ns

Rise Time :

76ns

Mount :

Through Hole

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

620A

Height :

19.8mm

Turn On Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Fall Time (Typ) :

77 ns

Operating Temperature :

-55°C~175°C TJ

Current Rating :

160A

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

230W Tc

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Series :

HEXFET®