IRFB3207PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Radiation Hardening :

No

Current Rating :

180A

Element Configuration :

Single

Power Dissipation :

300W

Continuous Drain Current (ID) :

180A

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Lead Pitch :

2.54mm

Width :

4.826mm

Drain to Source Breakdown Voltage :

75V

Published :

2004

Number of Terminations :

3

Number of Pins :

3

Nominal Vgs :

4 V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0045ohm

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Dual Supply Voltage :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Turn On Delay Time :

29 ns

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

Mount :

Through Hole

Power Dissipation-Max :

330W Tc

Length :

10.6426mm

Turn-Off Delay Time :

68 ns

Pulsed Drain Current-Max (IDM) :

720A

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Lead Free :

Lead Free

Voltage - Rated DC :

75V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Height :

4.82mm

Fall Time (Typ) :

74 ns

Threshold Voltage :

4V

ECCN Code :

EAR99

Rise Time :

120ns

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 50V