IRFB3206PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

55 ns

Series :

HEXFET®

Factory Lead Time :

12 Weeks

Current Rating :

210A

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V

Turn On Delay Time :

19 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Threshold Voltage :

4V

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

840A

Published :

2008

Fall Time (Typ) :

83 ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

175°C

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Case Connection :

DRAIN

Contact Plating :

Tin

Number of Pins :

3

Radiation Hardening :

No

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Voltage - Rated DC :

60V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 150μA

Rise Time :

82ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Width :

4.826mm

Power Dissipation :

300W

Resistance :

3mOhm

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

210A

Transistor Application :

SWITCHING

Recovery Time :

50 ns

Number of Channels :

1

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Height :

19.8mm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.668mm

Packaging :

Tube

Drain to Source Breakdown Voltage :

60V