IRFB3206PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Element Configuration :

Single

Number of Channels :

1

Continuous Drain Current (ID) :

210A

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Length :

10.668mm

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

175°C

REACH SVHC :

No SVHC

Current Rating :

210A

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Mount :

Through Hole

Power Dissipation-Max :

300W Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Radiation Hardening :

No

Package / Case :

TO-220-3

Power Dissipation :

300W

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V

Turn On Delay Time :

19 ns

Vgs(th) (Max) @ Id :

4V @ 150μA

Turn-Off Delay Time :

55 ns

Rise Time :

82ns

Number of Elements :

1

Width :

4.826mm

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Voltage - Rated DC :

60V

Vgs (Max) :

±20V

Height :

19.8mm

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

840A

Resistance :

3mOhm

Published :

2008

Recovery Time :

50 ns

Mounting Type :

Through Hole

Lead Free :

Lead Free

JESD-609 Code :

e3

Fall Time (Typ) :

83 ns