IRFB31N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Dual Supply Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.69mm

Rds On (Max) @ Id, Vgs :

82m Ω @ 18A, 10V

Element Configuration :

Single

Package / Case :

TO-220-3

Current Rating :

31A

Continuous Drain Current (ID) :

31A

Radiation Hardening :

No

Termination :

Through Hole

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

26 ns

Fall Time (Typ) :

10 ns

Series :

HEXFET®

Lead Free :

Contains Lead, Lead Free

Transistor Application :

SWITCHING

Length :

10.5156mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Recovery Time :

300 ns

Published :

1998

Threshold Voltage :

5.5V

Power Dissipation :

200W

Turn On Delay Time :

16 ns

Voltage - Rated DC :

200V

Number of Elements :

1

Vgs (Max) :

±30V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

Rise Time :

38ns

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

250

Factory Lead Time :

14 Weeks

Mounting Type :

Through Hole

Resistance :

82mOhm

Avalanche Energy Rating (Eas) :

420 mJ

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

3.1W Ta 200W Tc

Nominal Vgs :

5.5 V

Packaging :

Tube

Height :

8.763mm

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 25V