IRFB3004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Case Connection :

DRAIN

Rise Time :

220ns

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Lead Free :

Lead Free

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Number of Terminations :

3

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Width :

4.826mm

Number of Elements :

1

Continuous Drain Current (ID) :

340A

Power Dissipation-Max :

380W Tc

Rds On (Max) @ Id, Vgs :

1.75m Ω @ 195A, 10V

Turn On Delay Time :

23 ns

Height :

9.017mm

Transistor Element Material :

SILICON

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Package / Case :

TO-220-3

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Length :

10.668mm

Turn-Off Delay Time :

90 ns

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Resistance :

1.75MOhm

Power Dissipation :

380W

Mount :

Through Hole

Fall Time (Typ) :

130 ns

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

40V

Threshold Voltage :

4V