IRFB260NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

380W

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Vgs (Max) :

±20V

Width :

4.69mm

Drain to Source Breakdown Voltage :

200V

Continuous Drain Current (ID) :

56A

Turn On Delay Time :

17 ns

FET Type :

N-Channel

Height :

15.24mm

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

40m Ω @ 34A, 10V

Published :

2001

Number of Terminations :

3

Recovery Time :

360 ns

Packaging :

Tube

ECCN Code :

EAR99

Number of Elements :

1

Rise Time :

64ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

4220pF @ 25V

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

380W Tc

REACH SVHC :

No SVHC

Series :

HEXFET®

Voltage - Rated DC :

200V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Mounting Type :

Through Hole

Turn-Off Delay Time :

52 ns

Transistor Element Material :

SILICON

Resistance :

40Ohm

Pulsed Drain Current-Max (IDM) :

220A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Contact Plating :

Tin

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

450 mJ

Package / Case :

TO-220-3

Case Connection :

DRAIN

Fall Time (Typ) :

50 ns

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

4 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.5156mm

Mount :

Through Hole

Dual Supply Voltage :

200V

Current Rating :

56A