IRF8313TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.4986mm

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Radiation Hardening :

No

Turn-Off Delay Time :

8.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Turn On Delay Time :

8.3 ns

Threshold Voltage :

1.8V

Continuous Drain Current (ID) :

9.7A

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Mount :

Surface Mount

Fall Time (Typ) :

4.2 ns

JESD-609 Code :

e3

Nominal Vgs :

1.8 V

Element Configuration :

Dual

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Resistance :

15.5MOhm

Terminal Form :

Gull wing

Base Part Number :

IRF8313PBF

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2W

Width :

3.9878mm

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 9.7A, 10V

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Avalanche Energy Rating (Eas) :

46 mJ

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9.9ns

Published :

2008

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Power Dissipation :

2W

Terminal Finish :

Matte Tin (Sn)