IRF8113GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

3.5 ns

Current - Continuous Drain (Id) @ 25°C :

17.2A Ta

FET Type :

N-Channel

Width :

3.9878mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Min Operating Temperature :

-55°C

Rds On Max :

5.6 mΩ

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2910pF @ 15V

Rise Time :

8.9ns

Number of Elements :

1

Radiation Hardening :

No

Turn On Delay Time :

13 ns

Published :

2009

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Height :

1.4986mm

Input Capacitance :

2.91nF

Rds On (Max) @ Id, Vgs :

5.6mOhm @ 17.2A, 10V

Turn-Off Delay Time :

17 ns

Supplier Device Package :

8-SO

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

2.2 V

Continuous Drain Current (ID) :

17.2A

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Series :

HEXFET®

Drain to Source Resistance :

5.6MOhm

Mounting Type :

Surface Mount

Element Configuration :

Single

Length :

4.9784mm