IRF8010SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

320A

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

260W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Position :

Single

Number of Elements :

1

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

75A

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3830pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

310 mJ

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.015Ohm

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rds On (Max) @ Id, Vgs :

15m Ω @ 45A, 10V

Packaging :

Tube

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V