IRF8113TRPBF
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- Mfr.Part #
- IRF8113TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17.2A 8SO
- Stock
- 27,247
- In Stock ：
- 27,247
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Vgs (Max) :
- ±20V
- Lead Free :
- Contains Lead, Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Threshold Voltage :
- 2.2V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2910pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Row Spacing :
- 6.3 mm
- Nominal Vgs :
- 2.2 V
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 30V
- Termination :
- SMD/SMT
- Published :
- 2005
- Power Dissipation-Max :
- 2.5W Ta
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 13 ns
- Height :
- 1.4986mm
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 3.5 ns
- Length :
- 4.9784mm
- Dual Supply Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 17.2A Ta
- Rise Time :
- 8.9ns
- Current Rating :
- 16.6A
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 17.2A, 10V
- Resistance :
- 5.6MOhm
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 4.5V
- Drain to Source Breakdown Voltage :
- 30V
- Width :
- 3.9878mm
- Power Dissipation :
- 2.5W
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 17.2A
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 17 ns
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- IRF8113TRPBF
N-Channel Tape & Reel (TR) 5.6m Ω @ 17.2A, 10V ±20V 2910pF @ 15V 36nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF8113TRPBF Overview
The maximum input capacitance of this device is 2910pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17.2A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 17 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRF8113TRPBF Features
a continuous drain current (ID) of 17.2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
a threshold voltage of 2.2V
IRF8113TRPBF Applications
There are a lot of Infineon Technologies
IRF8113TRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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