IRF8010STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

120 ns

Published :

2003

Termination :

SMD/SMT

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

15m Ω @ 45A, 10V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Height :

4.826mm

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Contact Plating :

Tin

Number of Pins :

3

Resistance :

15mOhm

Power Dissipation :

260W

FET Type :

N-Channel

Vgs (Max) :

±20V

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

3830pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Threshold Voltage :

4V

Power Dissipation-Max :

260W Tc

Drain Current-Max (Abs) (ID) :

75A

Dual Supply Voltage :

100V

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Length :

10.668mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

80A

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Rise Time :

130ns

Turn-Off Delay Time :

61 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Lead Free :

Lead Free

Turn On Delay Time :

15 ns

Continuous Drain Current (ID) :

80A