IRF8010STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

80A

Mounting Type :

Surface Mount

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Height :

4.826mm

Width :

9.65mm

Rds On (Max) @ Id, Vgs :

15m Ω @ 45A, 10V

Turn On Delay Time :

15 ns

ECCN Code :

EAR99

Series :

HEXFET®

Current Rating :

80A

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

130ns

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

61 ns

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

260W Tc

Dual Supply Voltage :

100V

Power Dissipation :

260W

Terminal Form :

Gull wing

Mount :

Surface Mount

Number of Pins :

3

Termination :

SMD/SMT

Case Connection :

DRAIN

Contact Plating :

Tin

Factory Lead Time :

12 Weeks

Number of Elements :

1

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

75A

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Vgs (Max) :

±20V

Length :

10.668mm

Fall Time (Typ) :

120 ns

Input Capacitance (Ciss) (Max) @ Vds :

3830pF @ 25V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

100V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Resistance :

15mOhm

Nominal Vgs :

4 V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free