IRF8010STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Radiation Hardening :

No

Length :

10.668mm

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

75A

Dual Supply Voltage :

100V

Resistance :

15mOhm

Published :

2003

Turn-Off Delay Time :

61 ns

Width :

9.65mm

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Power Dissipation-Max :

260W Tc

Current Rating :

80A

Rise Time :

130ns

Peak Reflow Temperature (Cel) :

260

Termination :

SMD/SMT

Threshold Voltage :

4V

Number of Terminations :

2

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

260W

Case Connection :

DRAIN

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

3830pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Turn On Delay Time :

15 ns

Voltage - Rated DC :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

80A

Height :

4.826mm

Contact Plating :

Tin

Fall Time (Typ) :

120 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Mount :

Surface Mount

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

15m Ω @ 45A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V