IRF8010PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Published :

2002

Number of Pins :

3

Continuous Drain Current (ID) :

80A

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

3830pF @ 25V

Rise Time :

130ns

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

100V

Length :

10.5156mm

Drain Current-Max (Abs) (ID) :

75A

Element Configuration :

Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Current Rating :

80A

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Contact Plating :

Tin

ECCN Code :

EAR99

Recovery Time :

150 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Height :

8.763mm

Factory Lead Time :

12 Weeks

Width :

4.69mm

Lead Free :

Lead Free

Series :

HEXFET®

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Packaging :

Tube

Power Dissipation-Max :

260W Tc

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

120 ns

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

15 ns

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Dual Supply Voltage :

100V

Mount :

Through Hole

Resistance :

15Ohm

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Turn-Off Delay Time :

61 ns

FET Type :

N-Channel

Power Dissipation :

260W

Rds On (Max) @ Id, Vgs :

15m Ω @ 45A, 10V

RoHS Status :

ROHS3 Compliant