IRF8113

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0056Ohm

Number of Elements :

1

JEDEC-95 Code :

MS-012AA

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

48 mJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

17.2A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2910pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 17.2A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

17.2A Ta

JESD-30 Code :

R-PDSO-G8

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

8

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

135A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Series :

HEXFET®

Published :

2005

Vgs (Max) :

±20V