IRF8113

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

17.2A Ta

Published :

2005

FET Type :

N-Channel

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

135A

Power Dissipation-Max :

2.5W Ta

Input Capacitance (Ciss) (Max) @ Vds :

2910pF @ 15V

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 17.2A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain Current-Max (Abs) (ID) :

17.2A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0056Ohm

Surface Mount :

yes

Packaging :

Tube

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

48 mJ

JESD-30 Code :

R-PDSO-G8

JEDEC-95 Code :

MS-012AA

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Terminal Form :

Gull wing

Series :

HEXFET®

Terminal Finish :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

DS Breakdown Voltage-Min :

30V