IRF8313PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.0155Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.35V @ 25µA

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

2W

Avalanche Energy Rating (Eas) :

46 mJ

Power - Max :

2W

Drain to Source Voltage (Vdss) :

30V

Published :

2004

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

IRF8313PBF

Terminal Form :

Gull wing

Number of Elements :

2

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

9.7A

Drain Current-Max (Abs) (ID) :

9.7A

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 9.7A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

81A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

JEDEC-95 Code :

MS-012AA

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

Packaging :

Tube

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)