IRF7756

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

RoHS Status :

Non-RoHS Compliant

Current Rating :

-4.3A

Drain to Source Voltage (Vdss) :

12V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Voltage - Rated DC :

-12V

Continuous Drain Current (ID) :

4.3A

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Mount :

Surface Mount

FET Type :

2 P-Channel (Dual)

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.3A, 4.5V

Packaging :

Tube

Drain to Source Breakdown Voltage :

-12V

Mounting Type :

Surface Mount

Max Power Dissipation :

1W

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

900mV @ 250μA