IRF7752TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

36mOhm

Input Capacitance (Ciss) (Max) @ Vds :

861pF @ 25V

RoHS Status :

RoHS Compliant

FET Feature :

Logic Level Gate

Published :

2009

Drain to Source Breakdown Voltage :

30V

Min Operating Temperature :

-55°C

Series :

HEXFET®

Turn-Off Delay Time :

25 ns

Max Power Dissipation :

1W

Mount :

Surface Mount

Base Part Number :

IRF7752PBF

Vgs(th) (Max) @ Id :

2V @ 250μA

Max Operating Temperature :

150°C

Supplier Device Package :

8-TSSOP

Operating Temperature :

-55°C~150°C TJ

Width :

4.4958mm

Packaging :

Tape and Reel (TR)

Rise Time :

9.1ns

Power Dissipation :

1W

Number of Elements :

2

Radiation Hardening :

No

Input Capacitance :

861pF

Rds On Max :

30 mΩ

Length :

3.0988mm

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Turn On Delay Time :

7.2 ns

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Height :

1.0414mm

Lead Free :

Lead Free

Continuous Drain Current (ID) :

4.6A

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Resistance :

30mOhm

Rds On (Max) @ Id, Vgs :

30mOhm @ 4.6A, 10V

FET Type :

2 N-Channel (Dual)

Nominal Vgs :

2 V

Power - Max :

1W

Fall Time (Typ) :

11 ns

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

4.6A

Number of Pins :

8

Element Configuration :

Dual