IRF7752

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

861pF @ 25V

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PDSO-G8

Power - Max :

1W

JESD-609 Code :

e3

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.03Ohm

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

4.6A

Drain Current-Max (Abs) (ID) :

4.6A

JEDEC-95 Code :

MO-153AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

30m Ω @ 4.6A, 10V

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tube

Number of Elements :

2

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Series :

HEXFET®

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

1W