IRF7530TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

40A

Max Power Dissipation :

1.3W

Turn On Delay Time :

8.5 ns

Gate to Source Voltage (Vgs) :

12V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

5.4A

Height :

860μm

Terminal Form :

Gull wing

Threshold Voltage :

1.2V

Radiation Hardening :

No

Power Dissipation :

1.3W

Turn-Off Delay Time :

36 ns

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Length :

3mm

Width :

3mm

Nominal Vgs :

1.2 V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

11ns

Base Part Number :

IRF7530PBF

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Published :

2004

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

ULTRA LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.4A, 4.5V

Fall Time (Typ) :

16 ns

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

33 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Number of Terminations :

8

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Pins :

8

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Voltage - Rated DC :

20V

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

FET Type :

2 N-Channel (Dual)

FET Feature :

Standard

Mount :

Surface Mount

Current Rating :

5.4A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Series :

HEXFET®

Resistance :

30mOhm