IRF7530TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Voltage - Rated DC :

20V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.3W

Number of Terminations :

8

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

36 ns

Max Power Dissipation :

1.3W

Number of Pins :

8

Radiation Hardening :

No

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Height :

860μm

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

IRF7530PBF

Series :

HEXFET®

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Additional Feature :

ULTRA LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

33 mJ

Nominal Vgs :

1.2 V

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Resistance :

30mOhm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.4A, 4.5V

Pulsed Drain Current-Max (IDM) :

40A

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Turn On Delay Time :

8.5 ns

Published :

2004

FET Feature :

Standard

Threshold Voltage :

1.2V

Fall Time (Typ) :

16 ns

Continuous Drain Current (ID) :

5.4A

Length :

3mm

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Number of Elements :

2

Width :

3mm

Rise Time :

11ns

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Current Rating :

5.4A

Packaging :

Tape and Reel (TR)