IRF7530TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Series :

HEXFET®

FET Feature :

Standard

JESD-609 Code :

e3

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

5.4A

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.4A, 4.5V

Published :

2004

RoHS Status :

Non-RoHS Compliant

Number of Elements :

2

Qualification Status :

Not Qualified

JESD-30 Code :

S-PDSO-G8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Drain-source On Resistance-Max :

0.03Ohm

Avalanche Energy Rating (Eas) :

33 mJ

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Surface Mount :

yes

Power - Max :

1.3W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

40A

Base Part Number :

IRF7530

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V