IRF7530PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.03Ohm

Voltage - Rated DC :

20V

Length :

3.048mm

FET Feature :

Standard

Base Part Number :

IRF7530PBF

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.4A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Continuous Drain Current (ID) :

5.4A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Max Power Dissipation :

1.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

16 ns

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Turn On Delay Time :

8.5 ns

Max Operating Temperature :

150°C

Pulsed Drain Current-Max (IDM) :

40A

Rise Time :

11ns

Terminal Form :

Gull wing

Number of Pins :

8

Series :

HEXFET®

Turn-Off Delay Time :

36 ns

Current Rating :

5.4A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Min Operating Temperature :

-55°C

Avalanche Energy Rating (Eas) :

33 mJ

Published :

2004

Height :

910μm

Width :

3.048mm

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.2V @ 250µA

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Power Dissipation :

1.3W

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Packaging :

Tube

Number of Terminations :

8