IRF7509TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.25W

Transistor Element Material :

SILICON

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

110m Ω @ 1.7A, 10V

Number of Channels :

2

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Series :

HEXFET®

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Number of Pins :

8

Turn-Off Delay Time :

19 ns

Radiation Hardening :

No

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Length :

3.048mm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Resistance :

200mOhm

Drain to Source Breakdown Voltage :

30V

Width :

3.048mm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

IRF7509PBF

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1998

Nominal Vgs :

1 V

Power Dissipation :

1.25W

Continuous Drain Current (ID) :

2.7A

Lead Free :

Lead Free

Element Configuration :

Dual

Threshold Voltage :

1V

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

2.7A 2A

Rise Time :

12ns

FET Type :

N and P-Channel

Current Rating :

2.7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Fall Time (Typ) :

9.3 ns

Terminal Form :

Gull wing

Height :

1.11mm

Additional Feature :

ULTRA LOW RESISTANCE