IRF7509TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

2.7A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Width :

3.048mm

Additional Feature :

ULTRA LOW RESISTANCE

Published :

1998

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

2.7A 2A

Base Part Number :

IRF7509PBF

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Current Rating :

2.7A

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

110m Ω @ 1.7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Rise Time :

12ns

Terminal Form :

Gull wing

Height :

1.11mm

Fall Time (Typ) :

9.3 ns

Number of Channels :

2

Turn-Off Delay Time :

19 ns

Lead Free :

Lead Free

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Element Configuration :

Dual

Resistance :

200mOhm

Power Dissipation :

1.25W

Mount :

Surface Mount

Nominal Vgs :

1 V

Number of Terminations :

8

Threshold Voltage :

1V

Mounting Type :

Surface Mount

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Max Power Dissipation :

1.25W

Factory Lead Time :

12 Weeks

Number of Pins :

8

FET Type :

N and P-Channel

Operating Temperature :

-55°C~150°C TJ

Length :

3.048mm