IRF7504TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Code :

e3

Published :

1997

Base Part Number :

IRF7504

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

700mV @ 250μA

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

1.7A

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G8

Series :

HEXFET®

Drain-source On Resistance-Max :

0.27Ohm

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Power - Max :

1.25W

Pulsed Drain Current-Max (IDM) :

9.6A

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 15V

FET Type :

2 P-Channel (Dual)

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

1.7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR