IRF7503TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Max Power Dissipation :

1.25W

Current Rating :

2.4A

Width :

3mm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Nominal Vgs :

1 V

Series :

HEXFET®

Additional Feature :

ULTRA LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

FET Feature :

Logic Level Gate

Base Part Number :

IRF7503PBF

Power Dissipation :

1.25W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

3mm

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Resistance :

135mOhm

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Lead Free :

Lead Free

Number of Terminations :

8

Number of Pins :

8

Turn-Off Delay Time :

12 ns

REACH SVHC :

No SVHC

Turn On Delay Time :

4.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

860μm

Voltage - Rated DC :

30V

Terminal Form :

Gull wing

Radiation Hardening :

No

Transistor Element Material :

SILICON

Element Configuration :

Dual

Mounting Type :

Surface Mount

Fall Time (Typ) :

5.3 ns

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Pulsed Drain Current-Max (IDM) :

14A

JESD-609 Code :

e3

Contact Plating :

Tin

Rise Time :

10ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.4A

Operating Temperature :

-55°C~150°C TJ

Published :

1997

Threshold Voltage :

1V

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE