IRF7503TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Voltage - Rated DC :

30V

Resistance :

135mOhm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Dual

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Published :

1997

Height :

860μm

Lead Free :

Lead Free

Rise Time :

10ns

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

30V

FET Feature :

Logic Level Gate

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Threshold Voltage :

1V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Additional Feature :

ULTRA LOW RESISTANCE

Number of Elements :

2

Max Power Dissipation :

1.25W

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Turn-Off Delay Time :

12 ns

Base Part Number :

IRF7503PBF

Current Rating :

2.4A

Width :

3mm

ECCN Code :

EAR99

Turn On Delay Time :

4.7 ns

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

1 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

14A

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

2.4A

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Fall Time (Typ) :

5.3 ns

REACH SVHC :

No SVHC

Number of Pins :

8

Power Dissipation :

1.25W