IRF7503TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

5.3 ns

Lead Free :

Lead Free

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Contact Plating :

Tin

JESD-609 Code :

e3

Terminal Form :

Gull wing

ECCN Code :

EAR99

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Height :

860μm

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V

Base Part Number :

IRF7503PBF

Continuous Drain Current (ID) :

2.4A

Number of Terminations :

8

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Width :

3mm

Turn-Off Delay Time :

12 ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Additional Feature :

ULTRA LOW RESISTANCE

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

Nominal Vgs :

1 V

Turn On Delay Time :

4.7 ns

Mounting Type :

Surface Mount

Rise Time :

10ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

Radiation Hardening :

No

Power Dissipation :

1.25W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.25W

Transistor Application :

SWITCHING

Series :

HEXFET®

Threshold Voltage :

1V

Number of Elements :

2

Number of Pins :

8

Resistance :

135mOhm

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

14A

Length :

3mm

FET Type :

2 N-Channel (Dual)

Current Rating :

2.4A