IRF7501TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

12 Weeks

Resistance :

135mOhm

JESD-609 Code :

e3

Height :

860μm

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Series :

HEXFET®

Turn-Off Delay Time :

15 ns

Number of Terminations :

8

Max Power Dissipation :

1.25W

Transistor Element Material :

SILICON

Turn On Delay Time :

5.7 ns

Base Part Number :

IRF7501PBF

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Element Configuration :

Dual

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

700mV @ 250μA

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

20V

Current Rating :

2.4A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Number of Elements :

2

Rise Time :

24ns

Voltage - Rated DC :

20V

Continuous Drain Current (ID) :

2.4A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3mm

Radiation Hardening :

No

REACH SVHC :

No SVHC

Length :

3mm

Nominal Vgs :

700 mV

Published :

2007

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 4.5V

Fall Time (Typ) :

16 ns

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

12V

Pulsed Drain Current-Max (IDM) :

19A

Power Dissipation :

1.25W

Number of Pins :

8

Threshold Voltage :

700mV

Mount :

Surface Mount

Additional Feature :

ULTRA LOW RESISTANCE

Terminal Finish :

Matte Tin (Sn)