IRF7389

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

7.3A

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

30A

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Packaging :

Tube

Number of Terminations :

8

JESD-609 Code :

e0

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Drain to Source Voltage (Vdss) :

30V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

ECCN Code :

EAR99

Number of Elements :

2

Terminal Form :

Gull wing

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Power - Max :

2.5W

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.029Ohm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

JEDEC-95 Code :

MS-012AA

FET Type :

N and P-Channel

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Peak Reflow Temperature (Cel) :

245

Published :

2004

Terminal Finish :

TIN LEAD

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Avalanche Energy Rating (Eas) :

82 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)