IRF7379

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Pulsed Drain Current-Max (IDM) :

46A

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET Type :

N and P-Channel

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Published :

1998

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

5.8A 4.3A

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

5.8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power - Max :

2.5W

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

45m Ω @ 5.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Form :

Gull wing

JEDEC-95 Code :

MS-012AA

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tube

Drain-source On Resistance-Max :

0.045Ohm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Surface Mount :

yes

Series :

HEXFET®

Transistor Application :

SWITCHING

Number of Terminations :

8