IRF7343PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.7A, 10V

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2004

JEDEC-95 Code :

MS-012AA

Factory Lead Time :

14 Weeks

Terminal Finish :

Matte Tin (Sn)

FET Type :

N and P-Channel

Packaging :

Tube

Terminal Form :

Gull wing

Number of Elements :

2

Drain to Source Voltage (Vdss) :

55V

FET Feature :

Standard

Base Part Number :

IRF7343PBF

Current - Continuous Drain (Id) @ 25°C :

4.7A 3.4A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

ECCN Code :

EAR99

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

55V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Power Dissipation-Max (Abs) :

2W

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Terminal Position :

Dual

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

38A

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

72 mJ

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.05Ohm

Power - Max :

2W

Drain Current-Max (Abs) (ID) :

4.7A