IRF7342QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Min Operating Temperature :

-55°C

Base Part Number :

IRF7342QPBF

Max Operating Temperature :

150°C

Packaging :

Cut Tape (CT)

Turn On Delay Time :

14 ns

Published :

2014

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation :

2W

FET Feature :

Logic Level Gate

Rise Time :

10ns

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

-3.4A

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

FET Type :

2 P-Channel (Dual)

Number of Pins :

8

Turn-Off Delay Time :

43 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Width :

3.9878mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

30 Weeks

Power Dissipation :

2W

Height :

1.4986mm

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

55V

Length :

4.9784mm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

3.4A

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Mounting Type :

Surface Mount

Fall Time (Typ) :

22 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount