IRF7342PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

JESD-30 Code :

R-PDSO-G8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

55V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

39 Weeks

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

27A

Packaging :

Tube

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

FET Type :

2 P-Channel (Dual)

JEDEC-95 Code :

MS-012AA

Current - Continuous Drain (Id) @ 25°C :

3.4A

Published :

1999

Power - Max :

2W

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Power Dissipation-Max (Abs) :

2W

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.105Ohm

Drain to Source Voltage (Vdss) :

55V

ECCN Code :

EAR99

Additional Feature :

High Reliability

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

3.4A

Series :

HEXFET®

Base Part Number :

IRF7342PBF

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Avalanche Energy Rating (Eas) :

114 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR