IRF7341GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Continuous Drain Current (ID) :

5.1A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Drain-source On Resistance-Max :

0.05Ohm

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2005

DS Breakdown Voltage-Min :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Series :

HEXFET®

Max Power Dissipation :

2.4W

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Number of Terminations :

8

Mounting Type :

Surface Mount

Additional Feature :

ULTRA LOW RESISTANCE

Drain to Source Voltage (Vdss) :

55V

Power - Max :

2.4W

Pulsed Drain Current-Max (IDM) :

42A

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Transistor Application :

SWITCHING

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.1A, 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

MS-012AA

JESD-30 Code :

R-PDSO-G8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

140 mJ

Terminal Form :

Gull wing