IRF7338TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

IRF7338PBF

Min Operating Temperature :

-55°C

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

3A

Drain to Source Resistance :

34mOhm

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 9V

Drain to Source Voltage (Vdss) :

12V

Input Capacitance :

640pF

Series :

HEXFET®

Power - Max :

2W

Max Power Dissipation :

2W

Supplier Device Package :

8-SO

Gate to Source Voltage (Vgs) :

8V

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

12V

Number of Elements :

2

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 4.5V

Power Dissipation :

2W

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6.3A 3A

Rds On Max :

34 mΩ

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

34mOhm @ 6A, 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2004

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA