IRF7338PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

FET Feature :

Logic Level Gate

Height :

1.5mm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Width :

4mm

Rise Time :

13ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Supplier Device Package :

8-SO

Series :

HEXFET®

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Turn-Off Delay Time :

27 ns

Rds On (Max) @ Id, Vgs :

34mOhm @ 6A, 4.5V

Published :

2004

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

2

Base Part Number :

IRF7338PBF

Continuous Drain Current (ID) :

6.3A

Power - Max :

2W

Rds On Max :

34 mΩ

Drain to Source Resistance :

34mOhm

Packaging :

Tube

Lead Free :

Lead Free

Length :

5mm

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

25 ns

Input Capacitance :

640pF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

6.3A 3A

Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 9V

Drain to Source Breakdown Voltage :

12V

Resistance :

34mOhm

Drain to Source Voltage (Vdss) :

12V

Current Rating :

6.3A

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 4.5V

Max Power Dissipation :

2W

RoHS Status :

RoHS Compliant