IRF7331TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

REACH SVHC :

No SVHC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Length :

4.9784mm

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

8

Continuous Drain Current (ID) :

7A

Series :

HEXFET®

Width :

3.9878mm

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 16V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

7.6 ns

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

20V

Number of Elements :

2

FET Feature :

Logic Level Gate

Factory Lead Time :

12 Weeks

Power Dissipation :

2W

Current Rating :

7A

Fall Time (Typ) :

50 ns

Base Part Number :

IRF7331PBF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

110 ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Resistance :

30mOhm

Max Power Dissipation :

2W

Number of Terminations :

8

Rise Time :

22ns

Transistor Element Material :

SILICON

Height :

1.4986mm

Drain Current-Max (Abs) (ID) :

7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Contains Lead, Lead Free

Published :

2008

Mounting Type :

Surface Mount

Radiation Hardening :

No

Nominal Vgs :

1.2 V

Threshold Voltage :

1.2V

Terminal Form :

Gull wing

Element Configuration :

Dual

FET Type :

2 N-Channel (Dual)

Dual Supply Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V