IRF7331TRPBF

Manufacturer :

Philips

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2W

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

7A

Current Rating :

7A

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

110 ns

Number of Terminations :

8

Base Part Number :

IRF7331PBF

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

7.6 ns

Length :

4.9784mm

Rise Time :

22ns

Series :

HEXFET®

Radiation Hardening :

No

Width :

3.9878mm

Fall Time (Typ) :

50 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Number of Pins :

8

Voltage - Rated DC :

20V

Continuous Drain Current (ID) :

7A

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Height :

1.4986mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

20V

Threshold Voltage :

1.2V

Gate to Source Voltage (Vgs) :

12V

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 16V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2008

Resistance :

30mOhm

Nominal Vgs :

1.2 V

Lead Free :

Contains Lead, Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Power Dissipation :

2W